Gain and threshold current density characteristics of 2 micron
نویسندگان
چکیده
Compressively strained 2 m GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T0=140 °K for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T0 of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 m wavelength. A room-temperature threshold current density as low as 173 A/cm2hasbeen observed for a 2-QW device and 225 A/cm2 for the 4-QW laser.
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